This inventor holds 1 USPTO granted patent. Top assignee: Unitrode Corporation. Active years: 1992.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1992
Title: Elizabeth M Roughan: Innovator in Diode Technology
Introduction
Elizabeth M Roughan is a notable inventor based in Newton, MA (US). She has made significant contributions to the field of semiconductor technology, particularly through her innovative work on diode structures. Her expertise and creativity have led to advancements that enhance the performance and reliability of electronic components.
Latest Patents
Elizabeth M Roughan holds a patent for a new diode structure. This invention involves bonding two semiconductor materials together, resulting in a low capacitance diode with a large contact area and mechanical ruggedness. The design features a reduced cross-sectional area in the region of the bond, creating an hourglass or truncated hourglass-like shape. This configuration allows for sufficient spacing between unbonded semiconductor regions, effectively reducing total packaged diode capacitance without the need for a spacer layer. The diode is processed to limit the PN junction area to the bonding region, which further controls capacitance and electrical characteristics. The outer ends of the diode are connected to metal leads, ensuring a mechanically and electrically stable low capacitance diode.
Career Highlights
Elizabeth M Roughan is associated with Unitrode Corporation, where she has applied her innovative ideas to develop cutting-edge technologies. Her work has not only contributed to the company's success but has also advanced the field of semiconductor devices.
Collaborations
Elizabeth has collaborated with notable colleagues such as Scott C Blackstone and Philip Leland Hower. These partnerships have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.
Conclusion
Elizabeth M Roughan's contributions to diode technology exemplify her dedication to innovation in the semiconductor industry. Her patent for a new diode structure showcases her ability to solve complex engineering challenges and improve electronic components. Her work continues to influence the field and inspire future advancements.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile