Company Filing History:
Years Active: 1986
Title: Elizabeth E. Perry: Innovator in Semiconductor Technology
Introduction
Elizabeth E. Perry is a notable inventor based in Wyomissing, PA (US). She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent that addresses temperature compensation in integrated circuits.
Latest Patents
One of her key inventions is a temperature compensated semiconductor integrated circuit. This invention relates to a circuit capable of providing a negative temperature coefficient greater than that provided by discrete silicon integrated circuit components. The design incorporates a constant current source and a resistor divider network added to a bipolar junction transistor. These components work together to enhance the negative temperature coefficient of the transistor. The negative temperature compensation circuit developed by Perry effectively offsets the large positive temperature coefficient associated with high voltage avalanche breakdown diodes, all without the need for a high voltage integrated circuit. She holds 1 patent for this groundbreaking work.
Career Highlights
Elizabeth E. Perry has had a distinguished career at AT&T Bell Laboratories, where she has been instrumental in advancing semiconductor technology. Her work has not only contributed to the field but has also paved the way for further innovations in integrated circuit design.
Collaborations
Throughout her career, Perry has collaborated with various professionals, including her coworker Milton L. Embree. These collaborations have enriched her work and contributed to the success of her inventions.
Conclusion
Elizabeth E. Perry's contributions to semiconductor technology exemplify the impact of innovative thinking in engineering. Her patent on temperature compensated semiconductor integrated circuits showcases her ability to solve complex problems in the field.