The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 13, 1986
Filed:
Dec. 23, 1983
Milton L Embree, Reading, PA (US);
Elizabeth E Perry, Wyomissing, PA (US);
AT&T Bell Laboratories, Murray Hill, NJ (US);
Abstract
The present invention relates to a circuit capable of providing a negative temperature coefficient greater than that provided by discrete silicon integrated circuit components. A constant current source and a resistor divider network are added to a bipolar junction transistor, where the resistors and the constant current source function to increase the negative temperature coefficient of a bipolar junction transistor. The negative temperature compensation circuit formed in accordance with the present invention provides a sufficient negative temperature coefficient to offset the large positive temperature coefficient associated with high voltage avalanche breakdown diodes without requiring a high voltage integrated circuit.