Ramat Gan, Israel

Elisha Halperin


Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Ramat Gan, IL (2020 - 2022)
  • Maale Adumim, IL (2022)

Company Filing History:


Years Active: 2020-2025

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5 patents (USPTO):Explore Patents

Title: Elisha Halperin: Innovator in NAND Memory Technology

Introduction

Elisha Halperin is a prominent inventor based in Ramat Gan, Israel. He has made significant contributions to the field of NAND memory technology, holding a total of 5 patents. His work focuses on enhancing data storage and retrieval processes through innovative methods and systems.

Latest Patents

Halperin's latest patents include groundbreaking technologies such as "Reviving Faulty NAND by AI Data Modulation." This patent outlines systems, devices, and methods for decoding information bits obtained from storage. It involves utilizing a neural network to obtain a plurality of threshold voltage targets, which are then used to program memory cells in a storage device. Another notable patent is "Reinforcement Learning Pulse Programming," which describes a NAND memory device comprising multiple blocks and associated agents. This method allows for dynamic programming of the NAND memory device based on feedback from the system, optimizing performance and reliability.

Career Highlights

Elisha Halperin is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of NAND memory technology. His innovative approaches have positioned him as a key player in the industry, contributing to advancements that enhance data storage solutions.

Collaborations

Throughout his career, Halperin has collaborated with talented individuals such as Amit Berman and Evgeny Blaichman. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Elisha Halperin's contributions to NAND memory technology exemplify the impact of innovation in the field of data storage. His patents reflect a commitment to advancing technology and improving the efficiency of memory devices.

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