This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2008.
Company Filing History:
Years Active: 2008
Title: Elena Mean-Osteritz: Innovator in Resistive Memory Technology
Introduction
Elena Mean-Osteritz is a prominent inventor based in Elchingen, Germany. She has made significant contributions to the field of resistive memory technology. With a focus on charge transfer complexes, her work is paving the way for advancements in memory cell production.
Latest Patents
Elena holds 1 patent for her invention titled "Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories." This patent describes materials for producing memory cells that are sized in the nanometer range. The charge transfer complex includes thiophene derivatives, pyrrole derivatives, or phthalocyanines combined with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes, or perylene compounds, all located between two electrodes.
Career Highlights
Elena is currently employed at Infineon Technologies AG, where she continues to innovate in the field of memory technology. Her work is characterized by a commitment to developing advanced materials that enhance the performance of memory cells.
Collaborations
Throughout her career, Elena has collaborated with notable colleagues, including Guenter Schmid and Peter Baeuerle. These partnerships have contributed to her success and the advancement of her research.
Conclusion
Elena Mean-Osteritz is a trailblazer in the field of resistive memory technology, with her innovative patent and collaborative efforts driving progress in this important area of research. Her contributions are shaping the future of memory cell technology.