Elena I Oborina

Title: Innovations of Elena I Oborina

Introduction

Elena I Oborina is a prominent inventor based in Tampa, FL (US). She has made significant contributions to the field of semiconductor-dielectric interface structures. With a total of 2 patents, her work focuses on advancing the understanding and measurement of interface properties in these critical materials.

Latest Patents

One of her latest patents is titled "Noncontact determination of interface trap density for semiconductor-dielectric interface structures." This innovative method and apparatus utilize a sequence of noncontact Corona-Kelvin Metrology (C-KM) to determine and monitor interface properties in dielectric/wide band gap semiconductor structures. The technique involves the incremental application of precise and measured quantities of corona charge, Q, onto the dielectric surface, followed by the determination of the contact potential difference, V, as the material structure's response. The V-Q characteristics obtained are instrumental in extracting the surface barrier response related to the applied corona charge. This metrology method allows for the noncontact determination of the dielectric interface trap density and its spectrum, showcasing her expertise in the field.

Career Highlights

Elena I Oborina is affiliated with the University of South Florida, where she continues to contribute to research and innovation in semiconductor technologies. Her work has implications for improving the performance and reliability of electronic devices.

Collaborations

Elena collaborates with Andrew M Hoff, further enhancing her research capabilities and expanding the impact of her inventions.

Conclusion

Elena I Oborina's contributions to semiconductor-dielectric interface structures exemplify her innovative spirit and dedication to advancing technology. Her patents reflect her commitment to improving measurement techniques in this vital area of research.