Tokyo, Japan

Eiji Nagasawa

This inventor holds 3 USPTO granted patents. Top assignees: Nippon Electric Co., Ltd., Nec Corporation. Active years: 1976-1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eiji Nagasawa. Retrieved from https://idiyas.com/inventor/eiji-nagasawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 3

Forward Citations = 159(Granted Patents)


Location History:

  • Tokyo, JA (1976)
  • Tokyo, JP (1985)

Company Filing History:


Years Active: 1976-1985

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3 patents (USPTO):Explore Patents

Title: Eiji Nagasawa: Innovator in Semiconductor Technology

Introduction

Eiji Nagasawa is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His innovative approaches have paved the way for advancements in manufacturing processes within the semiconductor industry.

Latest Patents

Nagasawa's latest patents include a method of manufacturing semiconductor devices. This invention relates to forming a diffused region with a shallow junction that has a refractory metal silicide layer. The process begins with the selective formation of the refractory metal silicide layer on a silicon substrate of one conductivity type. An insulating film is then applied, followed by the opening of a contact hole on the silicide layer. After conducting necessary high-temperature treatments, a dopant impurity of the opposite conductivity type is introduced, allowing for the formation of the diffused region with a shallow junction.

Another notable patent involves the process of forming electrodes and interconnections on silicon. This process includes forming an insulating film on a silicon substrate, defining an opening, and depositing a high melting point metal layer. Ions are implanted to mix the interface between the metal layer and the silicon substrate. The construction is then heated to form a silicide of the metal layer, which is subsequently annealed in a non-reducing gas atmosphere.

Career Highlights

Throughout his career, Eiji Nagasawa has worked with notable companies such as Nippon Electric Co., Ltd. and NEC Corporation. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Nagasawa has collaborated with several talented individuals in his field, including Hidekazu Okabayashi and Mitsutaka Morimoto. These collaborations have further enhanced his work and contributions to semiconductor advancements.

Conclusion

Eiji Nagasawa's innovative work in semiconductor technology has led to significant advancements in manufacturing processes. His patents reflect a deep understanding of the complexities involved in semiconductor device fabrication. His contributions continue to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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