Tokyo, Japan

Eiji Ikawa

This inventor holds 1 USPTO granted patent. Top assignee: Nec Corporation. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eiji Ikawa. Retrieved from https://idiyas.com/inventor/eiji-ikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Eiji Ikawa: Innovator in Semiconductor Manufacturing

Introduction

Eiji Ikawa is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative methods have paved the way for advancements in technology.

Latest Patents

Eiji Ikawa holds a patent for a method for selectively etching a polycide layer. This patent describes a process for manufacturing a semiconductor device that includes anisotropic-etching of a high-melting-point metal silicide layer. The method utilizes a halogen-containing gas, primarily boron trichloride, along with either chlorine gas or hydrogen bromide as auxiliary components.

Career Highlights

Eiji Ikawa is associated with NEC Corporation, a leading company in the technology sector. His work has been instrumental in enhancing semiconductor device manufacturing processes. His expertise in this area has garnered recognition within the industry.

Collaborations

Throughout his career, Eiji Ikawa has collaborated with notable colleagues, including Kazuyoshi Yoshida and Hidenobu Miyamoto. These partnerships have contributed to the development of innovative solutions in semiconductor technology.

Conclusion

Eiji Ikawa's contributions to semiconductor manufacturing through his patented methods highlight his role as an influential inventor. His work continues to impact the technology landscape significantly.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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