Yamanashi, Japan

Eiichi Kondo

This inventor holds 1 USPTO granted patent. Top assignee: Yamanashi University. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eiichi Kondo. Retrieved from https://idiyas.com/inventor/eiichi-kondo-m0ao607n

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: Eiichi Kondo: Innovator in Thin Film Deposition Technology

Introduction: Eiichi Kondo is a notable inventor based in Yamanashi, Japan. He has made significant contributions to the field of thin film deposition technology. His innovative approach has led to advancements in the formation of multilayer structures of conductive metal thin films.

Latest Patents: Kondo holds a patent for a "Deposition method for oxide thin film or stacked metal thin films using supercritical fluid or subcritical fluid, and deposition apparatus therefor." This patent describes a method and apparatus that facilitate the easy formation of a multilayer structure of conductive metal thin films while also allowing for the creation of a metal oxide thin film, regardless of the substrate's conductivity. The process involves dissolving metal precursors and an oxidant in a supercritical or subcritical fluid, leading to the formation of a metal oxide thin film through an oxidation reaction. Subsequently, a reducing agent and conductive metal precursors are introduced to reduce the metal oxide thin film to a metal thin film.

Career Highlights: Kondo is affiliated with Yamanashi University, where he continues to engage in research and development in the field of materials science. His work has garnered attention for its practical applications in various industries, particularly in electronics and nanotechnology.

Collaborations:

Conclusion: Eiichi Kondo's contributions to thin film deposition technology exemplify the innovative spirit of modern inventors. His patent reflects a significant advancement in the field, showcasing the potential for practical applications in various sectors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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