Tateyama, Japan

Eiichi Iwanami

This inventor holds 5 USPTO granted patents. Top assignees: Nippon Steel Semiconductor Corporation, Nittetsu Semiconductor Co., Ltd.. Active years: 1997-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eiichi Iwanami. Retrieved from https://idiyas.com/inventor/eiichi-iwanami-f55m4gs7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 3

Forward Citations = 29(Granted Patents)


Company Filing History:


Years Active: 1997-2000

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5 patents (USPTO):Explore Patents

Title: **Eiichi Iwanami: Innovator in Metal Oxide Semiconductor Technology**

Introduction

Eiichi Iwanami is a notable inventor based in Tateyama, Japan, recognized for his significant contributions to the field of semiconductor technology. With five patents to his name, Iwanami has made impactful advancements that enhance the performance and reliability of metal oxide semiconductor devices.

Latest Patents

Iwanami's latest patents focus on a sophisticated metal oxide semiconductor device and the method of manufacturing it. His innovative design includes a p-type high concentration doped region that is strategically formed in a p-type semiconductor substrate. This region is located between two n-type doped regions: one serving as part of an input protection circuit, and the other as part of the internal circuitry. A critical aspect of his invention involves a plate that is divided into two sections over the high concentration doped region. This design effectively suppresses the generation of a parasitic MOS transistor, utilizing one n-type doped region as a source and the other as a drain, while the plate acts as a gate.

Career Highlights

Throughout his career, Eiichi Iwanami has worked with prominent companies in the semiconductor industry, including Nippon Steel Semiconductor Corporation and Nittetsu Semiconductor Co., Ltd. His experience in these organizations has greatly influenced his innovative designs and patents, allowing him to emerge as a leading figure in semiconductor technology.

Collaborations

Iwanami has collaborated with fellow inventor Toshio Wada, contributing to the advancements in semiconductor technology through their joint efforts. Their partnership has led to further improvements and innovations in the field, showcasing the importance of teamwork in the invention process.

Conclusion

In summary, Eiichi Iwanami's contributions to the metal oxide semiconductor field are a testament to his innovative spirit and dedication to technology. His patents not only advance the functionality of semiconductor devices but also pave the way for future innovations. As he continues to develop cutting-edge solutions, Iwanami remains an influential figure in the world of semiconductor research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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