Edwin Chow

Title: Edwin Chow: Innovator in Low Voltage EEPROM Technology

Introduction

Edwin Chow, based in Saratoga, California, is an accomplished inventor known for his contributions to memory device technology. With a total of five patents to his name, he has made significant advancements in the field of electrically erasable programmable memory (EEPROM) devices.

Latest Patents

One of Edwin Chow's latest patents focuses on developing a low voltage one transistor flash EEPROM cell using Fowler-Nordheim tunneling. This innovative memory device is designed to operate efficiently at low voltages, making it suitable for modern electronic applications. The patent details a single transistor structure where portions of the source and drain regions overlap with the gate dielectric layer. Additionally, it incorporates an interpoly dielectric layer with a high dielectric constant, enhancing the capacitive coupling between the floating gate, control gate, source, and drain. The logical conditions of the cells in the array are managed by elevating a block of cells to a high voltage threshold and selectively adjusting the thresholds of individual cells.

Career Highlights

Edwin has had a notable career, working for companies like Rohm GmbH and Rohn GmbH. His experience in these organizations has played a crucial role in developing his expertise in memory technology and semiconductor devices.

Collaborations

Throughout his career, Edwin Chow has collaborated with other skilled professionals, including Shang-De Chang and Jia-Hwang Chang. These collaborations have likely contributed to the innovative breakthroughs he has achieved in EEPROM technology.

Conclusion

In summary, Edwin Chow is a visionary inventor whose work in low voltage EEPROM technology has set new standards in the industry. His five patents reflect his dedication and ingenuity in enhancing memory device functionality, paving the way for future innovations.