Edward M Hull

Title: Edward M Hull: Innovator in High Power Semiconductor Devices

Introduction

Edward M Hull is a notable inventor based in LaGrangeville, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on methods for producing high power semiconductor devices, which are crucial for various electronic applications.

Latest Patents

Hull's latest patents include a method for producing high power semiconductor devices using anodic treatment. This innovative method involves providing a semiconductor substrate of N.sup.- conductivity and rendering the backside porous through anodic treatment in a concentrated solution of hydrofluoric acid. The porous region is then converted to an N.sup.+ region through arsenic diffusion, allowing for the formation of an active device on the top surface of the substrate. This technique not only permits the use of high-quality N.sup.- substrates but also eliminates the need for growing thick epitaxial layers, enhancing the efficiency of semiconductor devices.

Career Highlights

Edward M Hull is associated with the International Business Machines Corporation (IBM), where he has contributed to advancements in semiconductor technology. His work has been instrumental in developing methods that improve the performance and reliability of high power semiconductor devices.

Collaborations

Throughout his career, Hull has collaborated with notable colleagues, including Robert W Broadie and Joseph Adam Aboaf. These collaborations have fostered innovation and have led to significant advancements in the field of semiconductor technology.

Conclusion

Edward M Hull's contributions to high power semiconductor devices demonstrate his expertise and commitment to innovation in the field. His patents reflect a deep understanding of semiconductor technology and its applications, making him a valuable figure in the industry.