Santa Clara, CA, United States of America

Edward Lin

This inventor holds 1 USPTO granted patent. Top assignee: Hewlett-Packard Company. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Edward Lin. Retrieved from https://idiyas.com/inventor/edward-lin-m0o7j79b

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 40(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: Edward Lin: Innovator in Proximity Effect Correction

Introduction

Edward Lin is a notable inventor based in Santa Clara, CA. He has made significant contributions to the field of projection technology. His innovative approach focuses on correcting proximity effects in photolithography processes.

Latest Patents

Edward Lin holds a patent titled "Method of making a mask for proximity effect correction in projection." This patent addresses the challenges posed by diffraction of light through opaque portions of the reticle pattern. By modifying the reticle pattern, Lin ensures that the exposed pattern on the wafer achieves the desired characteristics, making isolated features and dense patterns identical and predictable. He has 1 patent to his name.

Career Highlights

Lin is currently employed at Hewlett-Packard Company, where he continues to push the boundaries of innovation in technology. His work has been instrumental in enhancing the accuracy and efficiency of projection systems.

Collaborations

Throughout his career, Edward Lin has collaborated with esteemed colleagues such as Frederik Sporon-Fiedler and Nader Shamma. These partnerships have fostered a creative environment that encourages groundbreaking advancements in their field.

Conclusion

Edward Lin's contributions to proximity effect correction in projection technology exemplify his dedication to innovation. His work not only enhances the precision of photolithography but also sets a standard for future advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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