San Jose, CA, United States of America

Edward L Sill


Average Co-Inventor Count = 3.3

ph-index = 2

Forward Citations = 40(Granted Patents)


Company Filing History:


Years Active: 1989-2000

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3 patents (USPTO):Explore Patents

Title: The Innovations of Edward L. Sill

Introduction

Edward L. Sill is a notable inventor based in San Jose, California. He has made significant contributions to the field of chemical vapor deposition (CVD) technology. With a total of three patents to his name, Sill's work focuses on minimizing stress in tungsten and tungsten silicide films during deposition processes.

Latest Patents

Sill's latest patents include innovative methods and apparatuses aimed at reducing as-deposited stress in tungsten. One of his patents describes a system for processing substrates in a CVD reactor where tungsten silicide is deposited. This process involves preflow and postflow of reducing gases before and after deposition steps. This ensures that a tungsten-rich film is not deposited at the interface of the tungsten silicide film and the substrates. Additionally, for systems with a remote gas injection and flow control system, an isolation valve is included in the gas supply manifold. This valve is held closed during specific times between deposition sequences to enhance the quality of the film.

Career Highlights

Throughout his career, Edward L. Sill has worked with several prominent companies, including Genus, Inc. and North American Philips Corporation, specifically in the Signetics Division. His experience in these organizations has contributed to his expertise in the field of semiconductor manufacturing and deposition technologies.

Collaborations

Sill has collaborated with notable colleagues such as Sien G. Kang and John Y. Adachi. Their combined efforts have further advanced the understanding and application of CVD processes in the industry.

Conclusion

Edward L. Sill's contributions to the field of chemical vapor deposition and his innovative patents have made a lasting impact on the industry. His work continues to influence advancements in semiconductor technology and materials science.

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