Genus, Inc.

North American Philips Corp, Signetics Division

Edward L Sill

Sien G Kang

Hector Velasco

David Badt

John Y Adachi

Paul G Hilton

Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.

Apparatus and methods for minimizing as-deposited stress in tungsten

Methods for minimizing as-deposited stress in tungsten silicide films

An MOS device having a planar configuration in which the top surfaces of the source, drain and gate electrodes are coplanar, and the overlying electrical contact structure is also planar, is produced by a method of fabrication in which the gate is defined by forming an oxide mesa on a substrate, building up the substrate with semiconductor material around the mesa, removing the mesa, and filling the resultant trough with doped polysilicon to form the self-aligned gate. Line width and alignment control are enchanced. The planarity of the device and the improved dimensional control enable a reduction of device dimensions and consequently increased device density in integrated circuits.

Method of fabrication of semiconductor device having a planar

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San Jose, CA, United States of America

Edward L Sill