Böblingen, Germany

Eckehard Ebert

This inventor holds 1 USPTO granted patent. Top assignee: International Business Machines Corporation. Active years: 1978.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eckehard Ebert. Retrieved from https://idiyas.com/inventor/eckehard-ebert

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1978

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1 patent (USPTO):Explore Patents

Title: The Innovations of Eckehard Ebert

Introduction

Eckehard Ebert is a notable inventor based in Böblingen, Germany. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on improving the integrity of semiconductor dielectric layers.

Latest Patents

Eckehard Ebert holds a patent for a silicon oxide/silicon nitride mask. This innovation features improved integrity for a semiconductor dielectric layer formed of silicon nitride. The layer has a uniform dispersion of carbon, which provides reduced intrinsic tensile stresses of less than 10 × 109 dyn/cm2.

Career Highlights

Eckehard Ebert is associated with International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to explore various advancements in semiconductor technology. His contributions have been instrumental in enhancing the performance and reliability of semiconductor devices.

Collaborations

Eckehard has collaborated with notable colleagues such as Armin Bohg and Erich Mirbach. These collaborations have fostered innovation and have led to significant advancements in their respective fields.

Conclusion

Eckehard Ebert's contributions to semiconductor technology through his patent and collaborations highlight his role as an influential inventor. His work continues to impact the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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