Boise, ID, United States of America

Duo Mao


Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2019-2020

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2 patents (USPTO):Explore Patents

Title: Innovations of Duo Mao in Charge Storage Technology

Introduction

Duo Mao is a notable inventor based in Boise, ID (US), recognized for his contributions to charge storage technology. With a total of 2 patents, he has made significant advancements in the field of programmable charge-storage transistors and memory cell arrays.

Latest Patents

Duo Mao's latest patents include innovative methods for forming Si3Nx and insulator materials that enhance the functionality of programmable charge-storage transistors. His work on an array of elevationally-extending strings of memory cells showcases his expertise in semiconductor technology. One of his key methods involves decomposing a silicon-comprising precursor molecule into distinct decomposition species, which react to form SiN. This process is crucial for developing advanced memory technologies.

Career Highlights

Duo Mao is currently employed at Micron Technology Incorporated, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing new materials and methods that improve the performance and efficiency of memory devices.

Collaborations

Duo has collaborated with talented coworkers, including Fei Wang and Kunal Shrotri, contributing to a dynamic research environment that fosters innovation.

Conclusion

Duo Mao's contributions to charge storage technology and his innovative patents position him as a key figure in the semiconductor industry. His work continues to influence advancements in memory technology, paving the way for future innovations.

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