Dragan V Podlesnik

Title: Dragan V Podlesnik: Innovator in Semiconductor Technology

Introduction

Dragan V Podlesnik is a notable inventor based in New York, NY (US). He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Dragan V Podlesnik holds a patent for a "Method of localized photochemical etching of multilayered semiconductor." This patent focuses on the sensitivity of localized photochemical etching to the optical and electrical properties of multilayered semiconductor materials. The method allows for selectively etching a laterally extending undercut in a buried layer. The semiconductor body is immersed in a suitable etching solution, and a beam of light of appropriate wavelength and intensity is directed onto the semiconductor solution interface. The buried layer has a longer diffusion length for photogenerated carriers than the layers adjacent to it, causing carriers to diffuse away from the illuminated region within the buried layer and thereby etch the buried layer laterally, undercutting the adjacent layers. This innovative approach enhances the precision and efficiency of semiconductor manufacturing.

Career Highlights

Dragan V Podlesnik is affiliated with Columbia University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Dragan has collaborated with esteemed colleagues such as Mark N Ruberto and Alan E Willner. Their combined expertise has contributed to the advancement of research in the field.

Conclusion

Dragan V Podlesnik is a prominent figure in semiconductor innovation, with a patent that showcases his expertise and contributions to the field. His work at Columbia University and collaborations with other experts further highlight his impact on technology.