Bucharest, Romania

Dorin Ioan Mohai

This inventor holds 2 USPTO granted patents. Top assignee: Infineon Technologies Ag. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dorin Ioan Mohai. Retrieved from https://idiyas.com/inventor/dorin-ioan-mohai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2016

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2 patents (USPTO):Explore Patents

Title: Dorin Ioan Mohai: Innovator in Semiconductor Technology

Introduction

Dorin Ioan Mohai is a prominent inventor based in Bucharest, Romania. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative semiconductor devices that enhance performance and efficiency.

Latest Patents

Dorin's latest patents include a Smart Semiconductor Switch, which is a sophisticated semiconductor device. This device comprises a semiconductor substrate doped with dopants of a first type and features a vertical transistor composed of one or more transistor cells. Each transistor cell has a first region formed in the substrate, which is doped with dopants of a second type, creating first pn-junctions with the surrounding substrate. Additionally, a first well region is formed in the substrate, also doped with dopants of a second type, to establish a second pn-junction with the substrate. The device includes a detection circuit integrated into the substrate, designed to detect whether the first pn-junctions are reverse biased. The switch operates by opening when the first pn-junctions are reverse biased and closing when they are not.

Another patent for the Smart Semiconductor Switch describes a semiconductor device that includes a vertical transistor with a body region formed in the substrate. This body region is doped with a second type of dopant, forming first pn-junctions with the substrate. A first well region is created in the substrate, forming a second pn-junction, while a second well region is also formed to create a third pn-junction. The detection circuit integrated in the second well region detects the biasing of the first pn-junctions, allowing the switch to connect or disconnect the first well region and the body regions of the transistor cell.

Career Highlights

Dorin Ioan Mohai is currently employed at Infineon Technologies AG, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing advanced technologies that are crucial for modern electronic devices.

Collaborations

Dorin collaborates with talented professionals in his field, including Adrian Finney and Andrei Cobzaru. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in semiconductor technology.

Conclusion

Dorin Ioan Mohai is a key figure in the semiconductor industry, with a focus on developing smart technologies

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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