Suwon, South Korea

Doojin Kim

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Doojin Kim. Retrieved from https://idiyas.com/inventor/doojin-kim-95sljodn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Doojin Kim: Innovator in Image Sensor Technology

Introduction

Doojin Kim is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of image sensor technology. His innovative work has led to the development of a unique image sensor that enhances the capabilities of modern imaging devices.

Latest Patents

Doojin Kim holds 1 patent for his invention related to an image sensor. The patent describes an image sensor that includes a substrate with a pixel array zone, a microlens layer, and multiple passivation layers. This design improves the performance and efficiency of image capturing devices.

Career Highlights

Doojin Kim is currently employed at Samsung Electronics Ltd., a leading company in technology and innovation. His role at Samsung has allowed him to work on cutting-edge projects that push the boundaries of imaging technology. His expertise in image sensors has positioned him as a valuable asset to the company.

Collaborations

Doojin Kim has collaborated with talented coworkers, including Junetaeg Lee and Sungkwan Kim. Together, they have worked on various projects that aim to advance the field of imaging technology.

Conclusion

Doojin Kim's contributions to image sensor technology exemplify his innovative spirit and dedication to advancing the field. His work at Samsung Electronics Ltd. continues to influence the development of high-quality imaging solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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