Gyeonggi-do, South Korea

Doo-Sam Song

This inventor holds 1 USPTO granted patent. Top assignee: Samsung C&t Corporation. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Doo-Sam Song. Retrieved from https://idiyas.com/inventor/doo-sam-song

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Doo-Sam Song: Innovator in Elevator Pressurization Systems

Introduction

Doo-Sam Song is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of building technology, particularly in addressing challenges faced in high-rise office buildings.

Latest Patents

Doo-Sam Song holds a patent for an "Interior zone pressurization method and system to reduce the stack effect problems." This innovative method and system aim to minimize the incomplete closing phenomenon between an elevator hole and an interior section. It also addresses the stack effect problem, which can lead to strong winds when opening an elevator door on upper floors of high-rise buildings. The method involves determining the degree of pressurization of the interior section based on target pressure resistance and calculating the necessary supply and exhaust air volumes.

Career Highlights

Doo-Sam Song is currently employed at Samsung C&T Corporation, where he continues to develop and refine his innovative ideas. His work focuses on enhancing the safety and efficiency of elevator systems in tall buildings.

Collaborations

Doo-Sam collaborates with Joong-Hoon Lee, a fellow innovator, to further advance their projects and share insights in their field.

Conclusion

Doo-Sam Song's contributions to elevator pressurization systems demonstrate his commitment to improving building safety and functionality. His innovative approach addresses critical issues faced in high-rise structures, making him a valuable figure in the field of building technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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