Suwon-si, South Korea

Donguk Park

This inventor holds 3 USPTO granted patents. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Donguk Park. Retrieved from https://idiyas.com/inventor/donguk-park-5aub3prr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.6


Company Filing History:


Years Active: 2026

Loading Chart...
3 patents (USPTO):Explore Patents

Title: Donguk Park: Innovator in Duty Cycle Correction Technology

Introduction

Donguk Park is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique duty cycle corrector.

Latest Patents

Donguk Park holds 1 patent for his invention titled "Duty cycle corrector, semiconductor device including the same, and operating method of duty cycle corrector." This patent describes a duty cycle corrector (DCC) that includes a first duty cycle correction circuit, a second duty cycle correction circuit, and an overshoot prevention circuit connected between the two correction circuits. Each of the duty cycle correction circuits comprises a capacitor, two inverters, a resistor, and two switches.

Career Highlights

Donguk Park is currently employed at Samsung Electronics Ltd., a leading company in the technology sector. His work at Samsung has allowed him to focus on advancing semiconductor devices and improving their performance.

Collaborations

He has collaborated with notable colleagues, including Wooseuk Oh and Kihwan Seong, to further enhance the innovations in his field.

Conclusion

Donguk Park's contributions to duty cycle correction technology exemplify his commitment to innovation in the semiconductor industry. His work continues to influence advancements in this critical area of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…