Suwon, South Korea

Dongok Shin

This inventor holds 2 USPTO granted patents and 2 published patent applications. Top assignee: Asm IP Holding B.v.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dongok Shin. Retrieved from https://idiyas.com/inventor/dongok-shin-mmszoqv4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0


Company Filing History:


Years Active: 2026

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Dongok Shin and Plasma Phase-Shift Wafer Processing

Introduction

Dongok Shin is an inventor based in Suwon, South Korea, associated with ASM IP Holding B.V. His listed work includes 2 patents concerning plasma-based substrate and wafer processing systems.

Latest Patents

“Substrate Processing Apparatus Using Plasma Phase Shift” describes a system with multiple reaction chambers on a platform and a plasma generator that supplies plasma or plasma power to the chambers. A control circuit can independently shift the phase supplied to each chamber, enabling phase adjustment across the processing system.

“Wafer Processing Apparatus Using Plasma Phase Shift” presents a related system for processing wafers in multiple reaction chambers. Its plasma generator supplies plasma at a specified frequency and phase, while a control circuit independently shifts the phase provided to each chamber.

Career Highlights

Shin’s listed inventions focus on controlling plasma phase in multi-chamber processing equipment. The described systems use independent phase adjustment to support plasma-based processing of substrates and wafers.

Collaborations

Jeongsu Lee and Songwhe Herr are listed as Shin’s coworkers.

Conclusion

Dongok Shin’s listed patent work centers on plasma phase control for multi-chamber substrate and wafer processing, with independent adjustment as a key feature of both inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…