Suwon, South Korea

Dongju Kim

This inventor holds 2 USPTO granted patents and 3 published patent applications. Top assignees: Samsung Electro-Mechanics Co., Ltd., Samsung Electronics Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dongju Kim. Retrieved from https://idiyas.com/inventor/dongju-kim-nlbtvube

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Dongju Kim and Multilayered Capacitor Innovation.

Introduction

Dongju Kim is an inventor based in Suwon, South Korea, and is associated with Samsung Electro-Mechanics Co., Ltd. His patent work concerns multilayered capacitor design.

Latest Patents

The provided information lists one patent for Kim: Multilayered Capacitor. The invention describes a capacitor body made of dielectric layers and paired internal electrode layers, connected to external electrodes on opposite sides of the body. The average lengths of the two pairs of internal electrode layers differ in the capacitor’s width direction. This arrangement defines the patent’s electrode configuration. Kim is credited with 1 patent in the supplied data.

Career Highlights

Kim’s listed patent reflects work on the structure of multilayered capacitors, an area relevant to electronic component design. The available information identifies his association with Samsung Electro-Mechanics Co., Ltd., but does not provide further details about his role or career history.

Collaborations

The supplied information names Hyukjin Hong and Kipyo Hong as Kim’s coworkers. It does not specify their roles in the patent or describe particular collaborative contributions.

Conclusion

Dongju Kim’s listed invention focuses on the internal electrode arrangement of a multilayered capacitor, documenting his contribution to electronic component innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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