Fujian, China

Donghong Lin

This inventor holds 1 USPTO granted patent. Top assignees: Chinese Academy of Sciences, Mindu Innovation Laboratory. Active years: 2025.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Donghong Lin in Nonlinear Optical Crystals

Introduction

Donghong Lin is a notable inventor based in Fujian, China. He has made significant contributions to the field of optoelectronic functional materials. His work primarily focuses on the development of innovative compounds that have practical applications in various technologies.

Latest Patents

Donghong Lin holds a patent for an alkali metal monohydrogen cyanurate compound, which is described by the chemical formula AM(HCNO)·nHO. This includes specific compounds such as KLi(HCNO)·2HO and RbNa(HCNO)·2HO. The patent details a nonlinear optical crystal that exhibits remarkable properties, including a frequency doubling effect that is approximately 2-3 times that of KHPO (KDP). The ultraviolet absorption edge of this crystal is shorter than 250 nm, making it suitable for harmonic generation of double, triple, or quadruple frequencies for Nd: YAG lasers at a wavelength of 1.064 μm. The crystal is characterized by its single crystalline structure, colorless and transparent appearance, and stability in air.

Career Highlights

Throughout his career, Donghong Lin has worked with prestigious institutions such as the Chinese Academy of Sciences and Mindu Innovation Laboratory. His research has significantly advanced the understanding and application of nonlinear optical materials.

Collaborations

Donghong Lin has collaborated with notable colleagues, including Ning Ye and Min Luo, who have contributed to his research endeavors.

Conclusion

Donghong Lin's innovative work in the field of nonlinear optical crystals showcases his expertise and dedication to advancing technology. His contributions are paving the way for future developments in optoelectronic materials.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…