Suwon-si, South Korea

Donggon Yoo

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Donggon Yoo. Retrieved from https://idiyas.com/inventor/donggon-yoo-4rczikz8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

Average Co-Inventor Count = 4.0


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Donggon Yoo: Innovator in Semiconductor Technology

Introduction

Donggon Yoo is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Donggon Yoo holds 1 patent for a semiconductor device. This device features a substrate with active regions, a device isolation layer, gate structures, source/drain regions, and contact plugs. The design includes a vertical buried structure and a horizontal buried structure, which work together to improve the functionality of the semiconductor device.

Career Highlights

Donggon Yoo is currently employed at Samsung Electronics Ltd., a leading company in the technology sector. His role at Samsung has allowed him to collaborate with other experts in the field and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Due to space constraints, the details of collaborations will not be included.

Conclusion

Donggon Yoo's work in semiconductor technology exemplifies innovation and dedication. His contributions continue to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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