Dong-Won Kim

Title: Innovations of Dong-Won Kim in Semiconductor Technology

Introduction

Dong-Won Kim is a notable inventor based in Sungnam, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for forming interconnections in semiconductor devices.

Latest Patents

One of his key patents is titled "Method of forming interconnection for semiconductor device." This invention relates to a method of forming an interconnection for a semiconductor device using copper. The method includes several steps: forming an insulating layer with a groove on a semiconductor substrate containing active elements, depositing a copper thin film on the insulating layer, and reflowing the copper thin film. This process can be completed in less than 30 minutes at temperatures below 450 degrees Celsius, which improves annealing conditions compared to conventional methods. Additionally, this low-temperature process reduces thermal energy consumption and prevents rapid diffusion of copper through the silicon substrate, thereby enhancing the productivity of semiconductor devices.

Career Highlights

Dong-Won Kim is associated with LG Semicon Co., Ltd., where he continues to work on advancing semiconductor technologies. His innovative approaches have positioned him as a key figure in the industry.

Collaborations

He has collaborated with notable colleagues such as Yong-Sup Hwang and Seung-Yun Lee, contributing to the development of cutting-edge semiconductor solutions.

Conclusion

Dong-Won Kim's contributions to semiconductor technology, particularly through his patented methods, demonstrate his commitment to innovation in the field. His work not only enhances productivity but also sets new standards for semiconductor manufacturing processes.