Daejeon-Shi, South Korea

Dong Wan Roh

This inventor holds 2 USPTO granted patents. Top assignee: Electronics and Telecommunications Research Institute. Active years: 1998-1999.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong Wan Roh. Retrieved from https://idiyas.com/inventor/dong-wan-roh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 71(Granted Patents)


Company Filing History:


Years Active: 1998-1999

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2 patents (USPTO):Explore Patents

Title: Innovations of Dong Wan Roh in Semiconductor Technology

Introduction

Dong Wan Roh is a prominent inventor based in Daejon-shi, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patents. With a total of 2 patents, his work focuses on enhancing the performance of electronic devices.

Latest Patents

One of his latest patents is the hot electron device, which addresses issues related to the performance of electronic devices. This invention improves current density and reduces transition time by introducing an indium arsenide layer with a v-shaped conduction band as the base layer of a hetero structure hot electron device. Another notable patent is the resonant tunneling hot electron device, which incorporates an emitter electron projection layer. This design allows for the alignment of Fermi energy and facilitates the projection of hot electrons into the base region.

Career Highlights

Dong Wan Roh is affiliated with the Electronics and Telecommunications Research Institute, where he continues to advance his research and development efforts. His work has been instrumental in pushing the boundaries of semiconductor technology.

Collaborations

He collaborates with Gyung Ock Kim, contributing to the innovative projects at their institute.

Conclusion

Dong Wan Roh's contributions to semiconductor technology through his patents demonstrate his commitment to innovation and excellence in the field. His work continues to influence the development of high-speed electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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