Dong W Baik

Title: Dong W. Baik and Semiconductor Field-Oxide Innovation.

Introduction

Dong W. Baik is an inventor associated with Seoul, South Korea, and Hyundai Electronics Industries Co. Ltd. His patent work addresses semiconductor-device fabrication, with a method designed to control the formation of field oxide on a silicon substrate.

Latest Patents

The available information identifies one patent for Baik: Method for Forming a Field Oxide Film in a Semiconductor Device. The method uses a triple buffer structure—nitride, oxide, and nitride—during fabrication. It describes forming and patterning buffer layers, thermally oxidizing the resulting structure to create a field oxide film, and removing part of the bird’s beak, a lateral oxide feature that can form during oxidation. The approach is intended to minimize the bird’s-beak size.

Career Highlights

Baik’s documented patent contribution focuses on improving control over a semiconductor manufacturing process. The patent describes a sequence of masking, etching, oxidation, and layer removal steps to shape the field oxide and reduce unwanted lateral growth. The record lists 1 patent.

Collaborations

Baik’s listed coworkers include Hyung Sun Yook and Sang Hoon Park. The patent information provided associates his work with Hyundai Electronics Industries Co. Ltd.

Conclusion

Dong W. Baik’s documented invention applies a triple-buffer process to field-oxide formation, aiming to reduce bird’s-beak growth in semiconductor devices.