Chungju-si, South Korea

Dong Seob Kim

This inventor holds 1 USPTO granted patent. Top assignee: Yg-1 Co., Ltd. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong Seob Kim. Retrieved from https://idiyas.com/inventor/dong-seob-kim-a8d224ff

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Dong Seob Kim: Coated Cutting Tool Innovation.

Introduction

Dong Seob Kim is an inventor associated with YG-1 Co., Ltd. in Chungju-si, South Korea. His patent work addresses coating technology for cutting tools, with a focus on wear resistance, chipping resistance, and coating adhesion.

Latest Patents

Kim is associated with 1 patent, titled “Coated Cutting Tool and Method for Making Coating Layer.” The patent describes a coating formed on all or part of a cutting-tool substrate. It includes columnar-grain MT-TiCN and α-Al₂O₃ layers. The MT-TiCN layer is deposited by chemical vapor deposition at 800°C to 950°C and has specified texture coefficients for the (311) and (422) crystal planes. The α-Al₂O₃ layer has columnar grains and a strong (006) orientation. The disclosed approach aims to provide wear and chipping resistance, along with strong adhesion, without relying on the HT-TiCN layer used in some earlier designs.

Career Highlights

Kim’s listed patent reflects work on materials and manufacturing methods for coated cutting tools. Its technical contribution centers on controlling crystal orientation and layer structure to improve coating performance.

Collaborations

Kim is associated with YG-1 Co., Ltd. His listed coworkers include Hye Min Ahn and Geun Woo Park.

Conclusion

Dong Seob Kim’s patent highlights an approach to cutting-tool coatings that combines oriented ceramic layers and a defined deposition process to support durability and adhesion.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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