Company Filing History:
Years Active: 2017
Title: The Innovations of Dong Lee
Introduction
Dong Lee is an accomplished inventor based in Dublin, California. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). With a focus on enhancing device performance, Lee's work has implications for various electronic applications.
Latest Patents
Dong Lee holds a patent for a high electron mobility transistor (HEMT) device. This innovative device features a highly resistive layer co-doped with carbon and a donor-type impurity. The patent outlines a method for fabricating the HEMT device, which includes a substrate, a channel layer, and a barrier layer. In one embodiment, the highly resistive layer is made of gallium nitride (GaN), while the donor-type impurity can be silicon or oxygen. This invention aims to improve the efficiency and performance of electronic devices.
Career Highlights
Lee is currently employed at Toshiba Corporation, where he continues to push the boundaries of semiconductor technology. His work at Toshiba has allowed him to collaborate with other talented professionals in the field, contributing to advancements in electronic components.
Collaborations
Some of Dong Lee's notable coworkers include William E. Fenwick and Long Yang. Their collaborative efforts have fostered an environment of innovation and creativity, leading to significant advancements in their respective areas of expertise.
Conclusion
Dong Lee's contributions to the field of high electron mobility transistors exemplify the spirit of innovation in semiconductor technology. His work not only enhances device performance but also paves the way for future advancements in electronics.