Dong Kyun Sohn

Title: Innovations of Dong Kyun Sohn in Semiconductor Technology

Introduction

Dong Kyun Sohn is a prominent inventor based in Daejeon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the formation of epitaxial layers. His work has implications for the advancement of semiconductor devices, which are crucial in modern electronics.

Latest Patents

One of his notable patents is titled "Method for forming epitaxial Co self-align silicide for semiconductor." This invention relates to the process of forming an epitaxial Co self-align silicide layer for semiconductor devices. The method involves creating a buffer layer on a silicon substrate, depositing cobalt, and applying an annealing process. This process is designed to prevent silicon and cobalt from reacting adversely during annealing, thereby enhancing the performance of semiconductor devices. The buffer layer can be formed through various techniques, including surface treatment with CHF₃ or O₂, ion implantation, or exposure to oxygen plasma. This innovation is particularly beneficial for forming shallow junctions, which are essential for scaling down semiconductor devices and improving their integration.

Career Highlights

Dong Kyun Sohn is associated with LG Semicon Co., Ltd., where he continues to work on advancing semiconductor technologies. His expertise and innovative approaches have positioned him as a key figure in the industry.

Collaborations

He has collaborated with Jeong Soo Byun, contributing to the development of cutting-edge semiconductor technologies.

Conclusion

Dong Kyun Sohn's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only enhances the performance of semiconductor devices but also paves the way for future innovations in electronics.