Company Filing History:
Years Active: 2021
Title: Innovations of Dong-il Moon in Three-Dimensional Memory Devices
Introduction
Dong-il Moon is a notable inventor based in Milpitas, California, recognized for his contributions to the field of memory devices. He holds two patents that showcase his innovative approach to three-dimensional memory technology. His work has significant implications for the advancement of data storage solutions.
Latest Patents
Dong-il Moon's latest patents focus on three-dimensional memory devices that incorporate plural work function word lines. These devices consist of an alternating stack of insulating layers and electrically conductive layers situated over a substrate. The memory openings extend vertically through the stack, and the memory stack structures contain a memory film and a vertical semiconductor channel. Notably, one of the electrically conductive layers features a first conductive material portion that contacts the memory films at a vertical interface. This portion has a lower work function than a second conductive material portion, which has a different composition. This innovative design enhances the performance and efficiency of memory devices.
Career Highlights
Dong-il Moon is currently employed at Sandisk Technologies Inc., where he continues to develop cutting-edge memory solutions. His expertise in three-dimensional memory technology has positioned him as a key player in the industry. His contributions are vital to the ongoing evolution of data storage technologies.
Collaborations
Dong-il Moon has collaborated with talented individuals such as Yanli Zhang and Raghuveer S Makala. These partnerships have fostered a creative environment that encourages innovation and the development of advanced memory technologies.
Conclusion
Dong-il Moon's work in three-dimensional memory devices exemplifies the innovative spirit of modern inventors. His patents reflect a commitment to enhancing data storage solutions, making significant strides in the field. His contributions will undoubtedly influence the future of memory technology.