The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Dec. 11, 2019
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Yanli Zhang, San Jose, CA (US);

Dong-il Moon, Milpitas, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Peng Zhang, Fremont, CA (US);

Wei Zhao, San Jose, CA (US);

Ashish Baraskar, Santa Clara, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01); H01L 27/11526 (2017.01); H01L 27/11565 (2017.01); H01L 27/11573 (2017.01); H01L 21/28 (2006.01); H01L 23/528 (2006.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31111 (2013.01); H01L 23/528 (2013.01); H01L 23/53242 (2013.01); H01L 23/53257 (2013.01); H01L 23/53271 (2013.01); H01L 27/11519 (2013.01); H01L 27/11526 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08);
Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through the alternating stack, and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a memory film and a vertical semiconductor channel. At least one of the electrically conductive layers contains a first conductive material portion having a respective inner sidewall that contacts a respective one of the memory films at a vertical interface, and a second conductive material portion that has a different composition from the first conductive material portion, and contacting the first electrically conductive material portion. The first conductive material portion has a lower work function than the second conductive material portion.


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