Gwangsan, South Korea

Dong-Hyuk Yeam

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong-Hyuk Yeam. Retrieved from https://idiyas.com/inventor/dong-hyuk-yeam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Dong-Hyuk Yeam: Innovator in Semiconductor Manufacturing

Introduction

Dong-Hyuk Yeam is a prominent inventor based in Gwangsan-gu, South Korea. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative methods that enhance device performance.

Latest Patents

Yeam holds a patent for a "Method for manufacturing semiconductor device having a metal gate electrode." This invention addresses the challenge of forming a metal gate electrode without voids in its lower portion. The method involves several steps, including providing a substrate, forming a dummy gate electrode, and creating recesses to facilitate the deposition of a metal gate electrode.

Career Highlights

Yeam's career is marked by his work at Samsung Electronics Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His expertise in manufacturing processes has contributed to the company's reputation as a leader in the electronics industry.

Collaborations

Throughout his career, Yeam has collaborated with notable colleagues, including Dong-kwon Kim and Young-Ju Park. These partnerships have fostered innovation and have led to advancements in semiconductor manufacturing techniques.

Conclusion

Dong-Hyuk Yeam's contributions to semiconductor manufacturing exemplify the importance of innovation in technology. His patented methods continue to influence the industry and enhance the performance of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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