Yongin-si, South Korea

Dong-Hwan Shim



Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2015-2018

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Dong-Hwan Shim

Introduction

Dong-Hwan Shim is a notable inventor based in Yongin-si, South Korea. He has made significant contributions to the field of thin film transistor technology. With a total of 3 patents to his name, Shim continues to push the boundaries of innovation in his industry.

Latest Patents

One of his latest patents is focused on a thin film transistor substrate and the method of manufacturing it. This substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern on the active pattern, and a gate electrode that overlaps the channel. Additionally, a light-blocking pattern is situated between the base substrate and the active pattern, which is larger than the active pattern itself. The active pattern comprises a source electrode, a drain electrode, and a channel located between these two electrodes. This innovative design enhances the performance and efficiency of thin film transistors.

Career Highlights

Dong-Hwan Shim is currently employed at Samsung Display Co., Ltd., where he applies his expertise in developing advanced display technologies. His work has been instrumental in improving the quality and functionality of display products.

Collaborations

Throughout his career, Shim has collaborated with talented individuals such as Sang-ho Park and Su-Hyoung Kang. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Dong-Hwan Shim's contributions to the field of thin film transistors exemplify his commitment to innovation and excellence. His patents and work at Samsung Display Co., Ltd. highlight his role as a key player in advancing display technology.

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