The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 27, 2018

Filed:

Jan. 26, 2016
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventors:

Sang-Ho Park, Suwon-si, KR;

Su-Hyoung Kang, Bucheon-si, KR;

Dong-Hwan Shim, Yongin-si, KR;

Yoon-Ho Khang, Yongin-si, KR;

Se-Hwan Yu, Seoul, KR;

Min-Jung Lee, Seoul, KR;

Yong-Su Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/127 (2013.01); H01L 21/28008 (2013.01); H01L 27/124 (2013.01); H01L 27/1262 (2013.01); H01L 29/66742 (2013.01); H01L 29/66757 (2013.01); H01L 29/786 (2013.01); H01L 29/7869 (2013.01); H01L 29/78633 (2013.01);
Abstract

A thin film transistor substrate includes a base substrate, an active pattern disposed on the base substrate, a gate insulation pattern disposed on the active pattern, a gate electrode disposed on the gate insulation pattern and overlapping the channel, and a light-blocking pattern disposed between the base substrate and the active pattern and having a size greater than the active pattern. The active pattern includes a source electrode, a drain electrode, and a channel disposed between the source electrode and the drain electrode.


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