Seoul, South Korea

Dong-Hwan Jang

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignees: Samsung Electronics Ltd., Seoul National University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong-Hwan Jang. Retrieved from https://idiyas.com/inventor/dong-hwan-jang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Dong-Hwan Jang: Innovator in Image Deblurring Technology

Introduction

Dong-Hwan Jang is an accomplished inventor based in Seoul, South Korea. He has made significant contributions to the field of image processing, particularly in the area of image deblurring. Throughout his career, he has worked with notable organizations such as Samsung Electronics Co., Ltd. and Seoul National University. His innovative approach to technology has garnered attention, even though he currently holds no granted patents.

Latest Patent Applications

Dong-Hwan Jang's latest patent application is titled "Method and Apparatus with Image Deblurring." This application presents a novel image deblurring method and apparatus. The method includes generating a primary feature representation on a first blur point in an input image and offset information on similar points of the first blur point by encoding the input image through an encoding model. It further involves generating secondary feature representations on the similar points by applying the offset information to the primary feature representation. Finally, an output image is generated based on the secondary feature representations and the offset information by implementing an implicit function model.

Conclusion

Dong-Hwan Jang's work in image deblurring showcases his innovative spirit and dedication to advancing technology. His contributions, although not yet reflected in granted patents, highlight the potential for future developments in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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