Gyeonggi-do, South Korea

Dong-Gun Hwang


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 16(Granted Patents)


Company Filing History:


Years Active: 2014-2015

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2 patents (USPTO):Explore Patents

Title: The Innovations of Dong-Gun Hwang

Introduction

Dong-Gun Hwang is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, Hwang's work focuses on enhancing the efficiency and functionality of semiconductor devices.

Latest Patents

Hwang's latest patents include a groundbreaking semiconductor device with air gaps and a method for fabricating the same. This innovative method involves several steps, including forming a plurality of bit line structures over a substrate, creating contact holes between these structures, and utilizing sacrificial spacers on the sidewalls of the contact holes. The process continues with the formation of first plugs recessed inside the contact holes, followed by the creation of air gaps through the removal of the sacrificial spacers. Finally, conductive capping layers are applied to cap the first plugs and air gaps, culminating in the formation of second plugs over these layers.

Career Highlights

Dong-Gun Hwang is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work at SK Hynix has positioned him as a key player in the development of advanced semiconductor technologies. Hwang's expertise and innovative approach have contributed to the company's reputation for excellence in the field.

Collaborations

Hwang has collaborated with notable colleagues, including Yong-Soo Joung and Hyung-Kyun Kim. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Dong-Gun Hwang's contributions to semiconductor technology through his patents and work at SK Hynix Inc. highlight his role as a significant inventor in the industry. His innovative methods and collaborative efforts continue to drive advancements in semiconductor devices.

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