This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Semes Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Dong Beom Jang and Semiconductor Substrate Treatment
Introduction
Dong Beom Jang is an inventor based in Cheonan, South Korea, associated with Semes Co., Ltd. His patent work addresses plasma-based substrate processing and control of conditions near a substrate’s edge.
Latest Patents
Jang is named on 1 patent: “Apparatus and Method for Treating Substrate.” The invention describes an apparatus that uses radio-frequency (RF) power to excite process gas into a plasma state. Its supporting unit includes an edge ring surrounding the substrate and a coupling ring beneath it, with an electrode connected to an edge impedance control circuit. The circuit is designed to control harmonics from the RF power source, adjust ion flux at the substrate’s edge, and compensate for impedance associated with RF cable length.
Career Highlights
Jang’s listed patent reflects work on semiconductor manufacturing equipment, particularly systems for managing plasma and edge-region processing. His affiliation with Semes Co., Ltd. connects this work to a company that develops semiconductor production equipment.
Collaborations
The available information identifies Semes Co., Ltd. as Jang’s company affiliation. No additional collaborators are specified in the provided patent details.
Conclusion
Dong Beom Jang’s patent focuses on coordinated control of plasma, ion flux, and impedance to support substrate treatment, highlighting his contribution to semiconductor processing technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile