This inventor holds 1 USPTO granted patent. Top assignee: Rca Inc.. Active years: 1977.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1977
Title: Donald Richard Tshudy and Selective Growth of Microcrystalline Silicon.
Introduction
Donald Richard Tshudy was an inventor associated with Lancaster, Pennsylvania. His documented patent describes a method for selectively growing microcrystalline silicon for use in a vidicon target.
Latest Patents
Tshudy’s listed patent, “Method of Selective Growth of Microcrystalline Silicon,” presents a process for forming an array of microcrystalline silicon pads. The method uses hydrogen reduction of silicon tetrachloride to grow silicon on portions of a silicon wafer exposed through openings in an overlying silicon dioxide layer. It is designed to prevent unwanted, irregular silicon growth on the dioxide layer between adjacent pads. Tshudy is credited with 1 patent.
Career Highlights
Tshudy’s recorded work connects him with RCA Inc., a company known for its contributions to electronics and technology. His patent reflects an effort to improve the controlled fabrication of silicon structures for electronic imaging applications.
Collaborations
The patent record identifies Thomas William Edwards as a coworker associated with Tshudy.
Conclusion
Donald Richard Tshudy’s documented contribution is a selective silicon-growth method intended to produce more precisely formed microcrystalline silicon pads for a vidicon target.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile