Springfield, OH, United States of America

Donald L Schuster

This inventor holds 1 USPTO granted patent. Top assignee: Houghton Technical Corporation. Active years: 2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Donald L Schuster. Retrieved from https://idiyas.com/inventor/donald-l-schuster

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: The Innovations of Donald L. Schuster

Introduction

Donald L. Schuster is an accomplished inventor based in Springfield, OH (US). He has made significant contributions to the field of materials science, particularly in the area of metal processing. His innovative work has led to the development of a unique patent that enhances the efficiency of lapping and polishing metals.

Latest Patents

Donald L. Schuster holds a patent for "Chemical assisted lapping and polishing of metals." This patent describes compositions for lapping gears, which contain a salt of polyaspartic acid. The compositions may also include additional components that are beneficial for lapping gears. Furthermore, the patent outlines processes for utilizing these compositions effectively.

Career Highlights

Schuster is currently associated with Houghton Technical Corporation, where he applies his expertise in materials science. His work at the company focuses on developing advanced solutions for metal processing, contributing to the industry’s growth and innovation.

Collaborations

One of his notable coworkers is Qi Wang, with whom he collaborates on various projects related to metal processing and innovations in the field.

Conclusion

Donald L. Schuster's contributions to the field of metal processing through his innovative patent demonstrate his commitment to advancing technology. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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