Company Filing History:
Years Active: 2004
Title: The Innovations of Donald D Flechtner
Introduction
Donald D Flechtner is a notable inventor based in Watertown, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high voltage Schottky diodes. His innovative methods have paved the way for advancements in electronic devices that require high efficiency and reliability.
Latest Patents
Flechtner holds a patent for a method of manufacturing high voltage Schottky diamond diodes with low boron doping. This patent outlines a process that includes providing a single crystal diamond, placing it in a CVD system, and growing an epitaxial diamond film on its surface. The method ensures that the Schottky diode can block at least about 6 kV in a distance of no more than about 300 micrometers. This innovation is crucial for applications that demand high voltage capabilities.
Career Highlights
Donald D Flechtner is associated with the United States Navy, where he contributes his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of electronic components used in various military and civilian applications. With a focus on high voltage applications, Flechtner's contributions are recognized within the industry.
Collaborations
Flechtner has collaborated with notable colleagues such as James E Butler and Michael W Geis. These partnerships have fostered an environment of innovation and have led to the successful development of advanced technologies in the field of electronics.
Conclusion
Donald D Flechtner's work exemplifies the spirit of innovation in semiconductor technology. His patent for high voltage Schottky diodes demonstrates his commitment to advancing electronic components. Through his career and collaborations, Flechtner continues to impact the field significantly.