USA as Represented by Secretary of the Navy

Donald D Flechtner

Michael W Geis

Robert Wright, Jr

James E Butler

A method of making a Schottky diode comprising the steps of: providing a single crystal diamond comprising a surface; placing the single crystal diamond in a CVD system; heating the diamond to a temperature of at least about 950&deg; C.; providing a gas mixture capable of growing diamond film and comprising a sulfur compound through the CVD system; growing an epitaxial diamond film on the surface of the single crystal diamond; baking the diamond at a temperature of at least about 650&deg; C. in air for a period of time that minimizes oxidation of the diamond; and fabricating a Schottky diode comprising the diamond film. A Schottky diode comprising an epitaxial diamond film and capable of blocking at least about 6 kV in a distance of no more than about 300 &mgr;m.

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Watertown, MA, United States of America

Donald D Flechtner