Donald A. Erickson is a notable inventor based in Colorado Springs, CO. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work has advanced the methods used in the fabrication of semiconductor devices, showcasing his expertise and innovative spirit.

Latest Patents

One of his latest patents is titled "Method of forming shallow trench isolation structure in a semiconductor device." This patent describes a method for fabricating a shallow trench isolation structure, which involves the sequential formation of various layers on a silicon substrate. The process includes photolithographic masking and anisotropic etching to create a trench, followed by the deposition of an oxide material and a chemical mechanical polishing step to achieve the desired structure.

Another significant patent is the "Method for forming thin tunneling windows in EEPROMs." This invention focuses on creating submicron dielectric windows that facilitate electron tunneling between a floating gate and substrate in a semiconductor EEPROM device. The method involves undercutting a mask edge over an oxide layer and building up the surrounding area with oxide to form a tunneling window.

Career Highlights

Donald A. Erickson has been associated with Atmel Corporation, where he has contributed to various innovative projects. His work has been instrumental in enhancing the performance and efficiency of semiconductor devices.

Collaborations

Throughout his career, Donald has collaborated with notable colleagues, including Bradley J. Larsen and Todd A. Randazzo. These collaborations have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Donald A. Erickson's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His innovative methods continue to influence the industry and pave the way for future advancements.