Marseille, France

Dominique Mangelinck


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Location History:

  • Marseilles, FR (2003)
  • Marseille, FR (2008)

Company Filing History:


Years Active: 2003-2008

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2 patents (USPTO):Explore Patents

Title: Innovations by Dominique Mangelinck

Introduction

Dominique Mangelinck is a notable inventor based in Marseille, France. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approaches.

Latest Patents

Mangelinck's latest patents include a method for fabricating a gate electrode for semiconductors. This method involves providing a substrate and layering a first material, selected from silicon, silicon-germanium alloy, germanium, and their mixtures, along with a metal layer. The process includes annealing these layers to ensure that they react with one another effectively. Another patent focuses on the fabrication of a nickel/platinum monsilicide film. This method entails depositing a nickel and platinum layer on a silicon region of a semiconductor structure and annealing it at temperatures between 680°C and 720°C to form a nickel-platinum silicide.

Career Highlights

Throughout his career, Mangelinck has worked with esteemed organizations such as the Institute of Materials Research and Engineering and the Agency for Science, Technology and Research. His work has significantly impacted the development of semiconductor technologies.

Collaborations

Mangelinck has collaborated with notable professionals in his field, including Dongzhi Chi and Syamal Kumar Lahiri. Their combined expertise has contributed to advancements in semiconductor research and development.

Conclusion

Dominique Mangelinck's innovative patents and career achievements highlight his important role in the semiconductor industry. His work continues to influence the field and inspire future innovations.

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