Agency for Science, Technology and Research

Institute of Materials Research and Engineering

Dominique Mangelinck

Dongzhi Chi

Syamal Kumar Lahiri

A method of fabricating a gate electrode for a semiconductor comprising the steps of: providing a substrate; providing on the substrate a layer of a first material of thickness t, the first material being selected from the group consisting of Si, Si&#x2014;Gealloy, Ge and mixtures thereof and a layer of metal of thickness t; and annealing the layers, such that substantially all of the first material and the metal are consumed during reaction with one another.

Gate electrodes and the formation thereof

A method of fabricating a silicide layer on a silicon region of a semiconductor structure, the method comprising the steps of: providing a semiconductor structure having at least one silicon region on a surface thereof; depositing a layer comprising nickel and platinum on the at least one silicon layer; annealing the semiconductor structure and the nickel/platinum layer to react the nickel and the platinum with underlying silicon to form a nickel-platinum silicide, wherein annealing step takes place at temperature of between 680&deg; C. and 720&deg; C.

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Marseille, France

Dominique Mangelinck