Location History:
- Poitiers, FR (2001)
- Paris, FR (2004)
Company Filing History:
Years Active: 2001-2004
Title: The Innovations of Dominique Lorans
Introduction
Dominique Lorans is a prominent inventor based in Paris, France. She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative spirit and technical expertise.
Latest Patents
Her latest patents include a method for the sulphidation treatment of III-V compound semiconductor surfaces. This method involves deoxidizing and passivating a surface of a III-V compound semiconductor material that has undergone strong oxidation in the presence of oxygen. The process requires immersing the surface in a dilute aqueous solution containing sulphide ions with a concentration between about 10 M and 10 M. Another notable patent is for an indium-based alloy and an infrared transducer using such an alloy. This alloy is designed for making an infrared transducer and is constituted by (In,Tl,) (As,Sb,) with specific parameters for x and y. The transducer is built on a GaSb or AlSb substrate, featuring an active layer of the alloy that matches the lattice size of the substrate material.
Career Highlights
Dominique Lorans has established herself as a key figure in her field through her work at Sagem SA. Her innovative approaches have led to advancements in semiconductor technology, particularly in the development of materials that enhance the performance of infrared transducers.
Collaborations
She has collaborated with notable colleagues, including Christian Verie and Michel Poirier, contributing to a dynamic and innovative work environment.
Conclusion
Dominique Lorans continues to push the boundaries of technology with her groundbreaking patents and contributions to the field of semiconductor research. Her work exemplifies the spirit of innovation that drives progress in technology.