Kaist, South Korea

Dojun Youm

This inventor holds 1 USPTO granted patent. Top assignee: Leland Stanford Junior University. Active years: 2001.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Dojun Youm: Innovator in Superconducting Memory Technology

Introduction

Dojun Youm is a prominent inventor based at KAIST in South Korea. He has made significant contributions to the field of superconducting memory technology. His innovative work focuses on enhancing memory elements through advanced materials and configurations.

Latest Patents

Dojun Youm holds a patent for a "Superconducting magnetoresistive memory element using controlled exchange interaction." This invention involves a magnetoresistive memory element that utilizes an enhanced proximity effect of ferromagnetic layers in a tri-layer configuration. The oscillatory decay characteristic of the pair wavefunction is expanded by using materials for the ferromagnetic layers with a low Curie temperature and a small exchange field. As a result, the sum magnetic field of the alternately parallel and anti-parallel magnetized layers changes the critical temperature of the superconductor below and above the operational device temperature. This ensures that a passing read pulse remains unaltered at one of the two logical conditions stored within the device. He has 1 patent to his name.

Career Highlights

Dojun Youm is affiliated with Leland Stanford Junior University, where he continues to advance research in superconducting technologies. His work has garnered attention for its potential applications in next-generation memory devices.

Collaborations

Dojun Youm collaborates with Malcolm R Beasley, a fellow researcher in the field. Their partnership has contributed to the development of innovative technologies in superconducting memory.

Conclusion

Dojun Youm is a key figure in the advancement of superconducting memory technology, with a focus on innovative materials and configurations. His contributions are paving the way for future developments in memory devices.

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