Suwon, South Korea

Do Hyun An

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electro-Mechanics Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Do Hyun An. Retrieved from https://idiyas.com/inventor/do-hyun-an

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Do Hyun An: Innovator in Electronic Components

Introduction

Do Hyun An is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of electronic components, particularly through his innovative patent.

Latest Patents

Do Hyun An holds a patent for an electronic component that features bonding portion regions mounted on a board. This electronic component includes a capacitor body with first and second external electrodes on its mounting surface. It also comprises first and second connection terminals connected to these electrodes. The patent details a first bonding portion that includes a first-2-th region with conductive resin and a first-1-th region with high melting point solder. Additionally, there is a second bonding portion with similar structural characteristics.

Career Highlights

Do Hyun An is currently employed at Samsung Electro-Mechanics Co., Ltd., where he continues to develop innovative solutions in electronic components. His work has contributed to advancements in the industry, showcasing his expertise and dedication.

Collaborations

He collaborates with talented coworkers, including Sang Yeop Kim and Kyong Nam Hwang, who share his commitment to innovation and excellence in their projects.

Conclusion

Do Hyun An's contributions to electronic components through his patent demonstrate his innovative spirit and technical expertise. His work at Samsung Electro-Mechanics Co., Ltd. continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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